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As an outstanding representative of the third generation semiconductor, GaN-based materials have been widely used in the field of optoelectronics, such as laser (LD), light emitting diode (LED), high electron mobility transistor (HEMT) and so on. In addition, GaN-based materials have good radiation resistance and high chemical stability. In recent years, people gradually began to pay attention to its basic and applied research in the field of nuclear detection. Conventional GaN-based materials have high background carrier concentration and high dislocation density, which makes the nuclear detector based on this material have high leakage current, while Fe-doped self-supporting GaN-based materials have high resistance and high Crystal quality can greatly reduce the leakage current of the detector, so it has a good application prospect in the field of nuclear detection and imaging.
Recently, Associate Researcher Lu Min and his team on the nano-processing platform of the Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences and their team used Fe-doped self-supporting GaN single wafers provided by Suzhou Weina Technology Co., Ltd. After exploring the micromachining process of the detector, we finally successfully developed a prototype device of Fe-doped self-supporting GaN-based X-ray detector. The detector adopts a vertical structure and upper and lower electrodes. In a dark environment, when the bias voltage is 200V, the photocurrent after the X-ray is turned on rapidly rises, and the ratio of dark current is as high as 180, and the hexagonal steel nut is realized. X-ray scanning for clear imaging.
The research work has been accepted for publication in the well-known Physica Status Solidi: Rapid Research Letters (Phys. Status Solidi RRL 5, No. 5–6, 187–189 (2011) / DOI 10.1002 / pssr.201105163). Reviewers think this research is very meaningful, and at the same time open up the potential application of Fe-doped GaN-based materials in the field of nuclear radiation detection. It is understood that the experimental report based on the self-supporting GaN-based X-ray detector is the first in the world.
This research work was strongly supported by Suzhou Navi Technology Co., Ltd., micro-nano processing platform, test and analysis platform, as well as the National Natural Science Foundation of China, Jiangsu Natural Science Foundation, and basic industrial research in Suzhou.
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