German scientists develop new transistors that can be switched between p-type and n-type

According to a report by the American Physicists Organization Network on December 21 (Beijing time), German scientists have developed a new type of general-purpose transistor, which can be used as a p-type transistor and an n-type transistor. The latest transistor is expected to make electronic equipment more Compact; scientists can also use it to design new circuits. Related research was published in the latest issue of "Nano Express".

At present, most electronic devices contain two different types of field effect transistors: n-type using electrons as charge carriers and p-type using holes as charge carriers. These two transistors generally do not convert to each other. The new transistor developed jointly by Dresden University of Technology and Deqimonda can be programmed by electrical signals to allow it to reassemble itself and walk between n-type transistors and p-type transistors.

The new transistor consists of a single metal-semiconductor-metal structure of nanowires embedded in a silicon dioxide shell. The electrons or holes flowing from one end of the nanowire reach the other end of the nanowire through two gates. These two gates control the flow of electrons or holes in different ways: one gate controls the type of transistor by choosing to use electrons or holes; the other gate controls electrons or holes by tuning the conductivity of the nanowires.

Traditional transistors determine whether they are p-type or n-type by doping different elements during the manufacturing process, while new-type transistors do not require any elements to be doped during the manufacturing process. The type of transistor can be reconfigured by applying an external voltage to a gate . The applied voltage causes the Schottky junction near the gate to prevent electrons or holes from flowing through the device. If the electrons are blocked and holes can flow, then the transistor is p-type, otherwise it is n-type.

The researchers explained that the key to making this reconfiguration work is to tune the electron flow through the Schottky junctions (one for each gate), and simulations show that the nanowire geometry plays a key role in this regard.

Although the research is still in its infancy, the new transistors exhibit excellent electrical characteristics. For example, compared with traditional nanowire field-effect transistors, the on / off ratio is higher and leakage is less. The research leader Walter Weber said: "In addition to artificial nanowires, the current advanced silicon semiconductor manufacturing technology can also be used to manufacture such transistors, and self-alignment technology can also be used to greatly increase the operating frequency and speed. "

Next, the scientists plan to improve the performance of the new transistor by changing the composition of the material and create the circuit that it runs. They said the biggest challenge is how to integrate additional gate signals when combining it with other transistors.

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