Suzhou Nano Research Institute made important breakthrough in GaN / Si power switch research

With the continuous improvement of energy efficiency standards, there is less and less room for improvement in power devices based on silicon (Si) materials; people are turning their attention to the field of new materials in order to achieve fundamental improvements, thereby triggering a revolutionary breakthrough in new generation power device technology. Among the many new materials, composite materials based on gallium nitride (GaN) attract the most attention. GaN-based power devices have the advantages of high breakdown voltage, high current density, fast switching speed, and high operating temperature. The performance is far superior to Si-based devices; the efficiency of electronic systems using GaN-based power switching devices can be improved by 3.5% to 7%. Can be reduced by 35%, with both high performance and high reliability. GaN epitaxial materials can be selected from a variety of substrates. Among them, epitaxial growth of GaN on Si substrates has obvious cost advantages. On the one hand, the price of Si substrates is very low, on the other hand, the size of Si substrates is large, which can form mass production The advantages.

GaN (GaN / Si) power switching devices on Si substrates are considered to be the most competitive market development direction. IR, Infineon, Fairchild, Samsung and other large international power device companies are actively developing GaN power switching devices, some of which are already in the trial production stage. It is estimated that the market size in 2015 will be 350 million US dollars, and then it will enter a period of rapid growth, and will reach a market size of 10 billion US dollars in the future.

The development of GaN / Si power switching devices covers material growth, device chip processing and packaging. The technical difficulty is extremely challenging. The units that can truly realize GaN / Si power switching devices are also few. The Nano Processing Platform of the Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences, has been conducting research on key technologies for GaN / Si power switching devices since 2010, and has established cooperation with Suzhou Silicon Energy Semiconductor Technology Co., Ltd. Professor Jing is a technical consultant.

After nearly two years of research and development, researchers have recently successfully developed AlGaN / GaN / Si HEMT normally-off power switching devices with threshold voltage 3.5V, output current 5.3A, gate input voltage up to 15V, and breakdown voltage 402V. This is also the first report of GaN / Si power switching devices in China. It realizes the direct replacement of existing Si power devices, meets the safety index requirements of device applications, and reaches the international leading level.

AlGaN / GaN / Si power switching devices

Photos inside the chip

Output characteristic curve of AlGaN / GaN / Si power switching device

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